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In0.1Ga0.9As/GaAs nanomembrane

Based on

1 Articles
2014 Most recent source

Composition

1

aluminium(III) arsenide

aluminium arsenide aluminum arsenide
Type Single Compound
Formula AlAs
Role partial layer
2

indium gallium arsenide/gallium arsenide bilayer

In0.1Ga0.9As/GaAs bilayer InGaAs/GaAs bilayer
Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
elastic energy profile

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Applications

Area Application Nanomaterial Variant Source
membranes

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
  1. i8X29FUkfTsHFJtfS1ee0C
  2. ZzCF3En0oA16XJxpm2t2a38
Product

In0.1Ga0.9As/GaAs nanomembrane

Thickness: ~ 200 nm

Wrinkle periodicity: ~ 11000 nm

Medium: none

Support: low temperature gallium arsenide

Method 2

Type: Chemical synthesis
Source:
  1. PhS4FNmHYfbwxAH7Wj9FFV
  2. 1COjGP6FoZUrR4ZBwUL7lWP
Product

In0.1Ga0.9As/GaAs nanomembrane

Thickness: ~ 200 nm

Medium: none

Support: low temperature gallium arsenide

Method 3

Type: Chemical synthesis
Source:
  1. TNOuKRO0WCIMsmHx3SwoAQ
  2. FJNkn6IM1RykVaYV66ZpvAZ
Product

In0.1Ga0.9As/GaAs nanomembrane

Thickness: ~ 200 nm

Wrinkle periodicity: ~ 20000 nm

Medium: none

Support: low temperature gallium arsenide

Method 4

Type: Chemical synthesis
Source:
  1. TRGpGUcMgyq8BiXgPTsYUO
  2. JngnjUQQMaDNAhFXKsuvzn1
Product

In0.1Ga0.9As/GaAs nanomembrane

Thickness: ~ 200 nm

Wrinkle periodicity: ~ 35000 nm

Medium: none

Support: low temperature gallium arsenide

Method 5

Type: Chemical synthesis
Source:
  1. tA6FNNLBbP453wA9uKX81z
  2. 0p9owfJAzKvUdUNXB6jgpcn
Product

In0.1Ga0.9As/GaAs nanomembrane

Thickness: ~ 200 nm

Wrinkle periodicity: 27000 - 33000 nm

Medium: none

Support: low temperature gallium arsenide

References

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