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self-organized In0.4Ga0.6N QD

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

n-doped gallium nitride

n-GaN
Type Complex Compound
Formula
Role layer
2

aluminium gallium nitride

aluminum gallium nitride
Type Single Compound
Formula Al0.07Ga0.93N
Role layer
3

aluminium indium nitride

indium aluminum nitride
Type Single Compound
Formula Al0.82In0.18N
Role layer
4

InGaN quantum dots/GaN bilayer

InGaN QD/GaN bilayer
Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
photoluminescence lifetime

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Applications

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium
  • nitrogen
  1. VYUGcXFXMQfUvMyq4AaIX
  2. gKTddyVgky08F8ARmU2wz
  3. s6GfFlbIaDotBOhqbo
Product

self-organized In0.4Ga0.6N QD

Thickness: 500 nm

Thickness: 70 nm

Medium/Support: none

References

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