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InGaN/GaN dot-in-nanowire ensembles

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium nitride

Type Single Compound
Formula GaN
Role layer
2

InGaN/GaN bilayer

Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
photoluminescence lifetime

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Applications

Characterization

Method Nanomaterial Variant Source
electron energy-loss spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium
  • nitrogen
  1. nPOtC0IoEey0UqmAGL43
  2. dKBGq8
  3. xw1c9hUxvUz3gvt
Product

InGaN/GaN dot-in-nanowire ensembles

Diameter: ~ 50 nm

Thickness: ~ 300 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • gallium
  • nitrogen
  1. twjUDXHwSGD1zTpzCTc1
  2. 7pV3OU
  3. 4LxGsHxlpDCrk0V
Product

InGaN/GaN dot-in-nanowire ensembles

Diameter: ~ 25 nm

Thickness: ~ 300 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • gallium
  • nitrogen
  1. fqdBg4T4o9xBYAqt5Men
  2. wvrkNa
  3. itDiQ4v372ej3wd
Product

InGaN/GaN dot-in-nanowire ensembles

Diameter: ~ 100 nm

Thickness: ~ 300 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • gallium
  • nitrogen
  1. 2ljfuGXJQWDeqIEVfyeG
  2. xsuXQ94NQPrealO
Product

InGaN/GaN dot-in-nanowire ensembles

Diameter: ~ 25 nm

Thickness: ~ 300 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • gallium
  • nitrogen
  1. PgaSFeCvgNHNr5UJDkku
  2. cwf8RD0Kpmuxqrm
Product

InGaN/GaN dot-in-nanowire ensembles

Diameter: ~ 80 nm

Thickness: ~ 300 nm

Medium/Support: none

References

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