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InGaN/GaN dot-in-nanowire ensembles

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium nitride

Type Single Compound
Formula GaN
Role layer
2

InGaN/GaN bilayer

Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Source
photoluminescence lifetime

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Applications

Characterization

Method Source
electron energy-loss spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium
  • nitrogen
  1. sVgCn0YKSCOUU0YA3iFO
  2. 3HskJa
  3. vanfLPcECzOyOHU
Product

InGaN/GaN dot-in-nanowire ensembles

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • gallium
  • nitrogen
  1. a2ybfvX5ZZuRh4F9o9bJ
  2. vqUQX9
  3. JB8mV6gDmtbiK0u
Product

InGaN/GaN dot-in-nanowire ensembles

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • gallium
  • nitrogen
  1. ZaXTVZReiElYjwgndBjm
  2. gZppCV
  3. zFCJ05fmGXudL8r
Product

InGaN/GaN dot-in-nanowire ensembles

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • gallium
  • nitrogen
  1. T0WSvlXoQ4yaUv91UtPY
  2. wBlAuogQYsm73PQ
Product

InGaN/GaN dot-in-nanowire ensembles

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • gallium
  • nitrogen
  1. 8bn2NEZ1nrTbQQiDuvpi
  2. VALwtBGCYV91PRM
Product

InGaN/GaN dot-in-nanowire ensembles

References

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