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GaAs/InGaAs/GaAs nanowire core-multishell quantum well heterostructure

Based on

1 Articles
2015 Most recent source

Composition

1

In0.2Ga0.8As quantum well

InGaAs QW
Type Nano Material
Formula
Role core
2

gallium arsenide

Type Single Compound
Formula GaAs
Role fillers
3

gallium arsenide

Type Single Compound
Formula GaAs
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
emission

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Applications

Area Application Nanomaterial Variant Source
lasers

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Characterization

Method Nanomaterial Variant Source
energy dispersive X-ray spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. OMmRE8kvSu8YQqBdkjD
Product

GaAs/InGaAs/GaAs nanowire core-multishell quantum well heterostructure

Diameter: 300 nm

Length: ~ 7000 nm

Medium: none

Support: gold-coated GaAs B

References

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