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aluminium gallium nitride/gallium nitride multiple quantum well

Based on

1 Patents
2012 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

aluminium gallium nitride

Type Complex Compound
Formula
Role layer
2

aluminium nitride

aluminum nitride AlN
Type Single Compound
Formula AlN
Role layer

Properties

Applications

Area Application Nanomaterial Variant Source
lighting devices

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • trimethylaluminium
  • ammonia
  • trimethanidogallium
Product

aluminium gallium nitride/gallium nitride multiple quantum well

Thickness: 3 nm

Thickness: 60 - 900 nm

Medium/Support: none

References

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