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GaN/AlGaN dot-in-nanowire ensembles

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

aluminium gallium nitride

aluminum gallium nitride Al0.2Ga0.8N AlGaN
Type Single Compound
Formula Al0.20Ga0.80N
Role layer
2

GaN/AlGaN bilayer

Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
photoluminescence lifetime

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Applications

Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • aluminium
  • gallium
  • nitrogen
  1. mmQwDOhr9NLIfcz5b7rK
  2. q1p7954HUybPk08
Product

GaN/AlGaN dot-in-nanowire ensembles

Diameter: ~ 30 nm

Thickness: ~ 300 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • aluminium
  • gallium
  • nitrogen
  1. 0e0V1v6F7xaR5xBQeGo6
  2. RRbsjgroADcNo1q
Product

GaN/AlGaN dot-in-nanowire ensembles

Diameter: ~ 25 nm

Thickness: ~ 300 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • aluminium
  • gallium
  • nitrogen
  1. CkdVYVPQOG1mL8KQtDSp
  2. NiAKPVaenZDdbQY
Product

GaN/AlGaN dot-in-nanowire ensembles

Diameter: ~ 25 nm

Thickness: ~ 300 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • aluminium
  • gallium
  • nitrogen
  1. eZdtdRxOqMpQ5pzZYC1Y
  2. QLOheBRjVDkWj0O
Product

GaN/AlGaN dot-in-nanowire ensembles

Diameter: ~ 80 nm

Thickness: ~ 300 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • aluminium
  • gallium
  • nitrogen
  1. WQQrTNKzs3iALt32UPU9
  2. eOjwTbzIL3egJ5r
Product

GaN/AlGaN dot-in-nanowire ensembles

Diameter: ~ 60 nm

Thickness: ~ 300 nm

Medium/Support: none

References

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