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GaN/AlGaN dot-in-nanowire ensembles

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

aluminium gallium nitride

aluminum gallium nitride Al0.2Ga0.8N AlGaN
Type Single Compound
Formula Al0.2Ga0.8N
Role layer
2

GaN/AlGaN bilayer

Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Source
photoluminescence lifetime

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Applications

Characterization

Method Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • aluminium
  • gallium
  • nitrogen
  1. YcnguaE735ZKyyCfhRTm
  2. 6sf5PB07j5dYKit
Product

GaN/AlGaN dot-in-nanowire ensembles

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • aluminium
  • gallium
  • nitrogen
  1. LP5Q5i9EzjdPNg6HRLhm
  2. W1EAjp3nAuiSj99
Product

GaN/AlGaN dot-in-nanowire ensembles

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • aluminium
  • gallium
  • nitrogen
  1. 4EwY7lOm7OSWcyPkTKf4
  2. DINTEchF9ZG5i1h
Product

GaN/AlGaN dot-in-nanowire ensembles

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • aluminium
  • gallium
  • nitrogen
  1. 3bvnViqXxRBOicT7f5Pg
  2. ZsyiMJ5nnT0DnkW
Product

GaN/AlGaN dot-in-nanowire ensembles

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • aluminium
  • gallium
  • nitrogen
  1. PJazyS61tjrbWXbNUq0s
  2. GCCrGvioyitGqoB
Product

GaN/AlGaN dot-in-nanowire ensembles

References

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