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example of p-type semiconductor NW

Based on

8 Articles
1 Patents
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium(III) arsenide

indium monoarsenide indium arsenide
Type Single Compound
Formula InAs
Role raw materials
2

zinc

Type Single Compound
Formula Zn
Role dopant

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
absolute phase spectrum of scattered terahertz electric-field waveform dependent on pump-gate delay time

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Applications

Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • tertiary-butyl-arsine
  • di-tertiary-butyl-selenide
  • trimethylindigane
  1. ekFxv4A2z3cYwwhp372CVdWuhwYBIk
Product

example of p-type semiconductor NW

Diameter: ~ 40 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • antimony
  • indium
  1. LYSqS3G
Product

example of p-type semiconductor NW

Diameter: ~ 109 nm

Length: ~ 870 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • antimony
  • indium
  1. ZPcBkIC
Product

example of p-type semiconductor NW

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • tertiary-butyl-arsine
  • di-tertiary-butyl-selenide
  • trimethylindigane
  1. uxwmY3Q9T8CQ0ygP3PmIcy260Y9TdsUHl3Qdb6Blvu47fDpXka
  2. kycfS
  3. F2e
Product

example of p-type semiconductor NW

Diameter: 80 - 100 nm

Length: ~ 2500 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • antimony
  • indium
  1. LSiHNgf
Product

example of p-type semiconductor NW

Size: not specified

Medium/Support: none

References

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