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GaInN/GaN multiple quantum wells grown on LT-GaN/biaxial W film

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

tungsten

Type Single Compound
Formula W
Role layer
2

gallium(III) nitride

Type Single Compound
Formula GaN
Role layer
3

gallium indium nitride/gallium nitride multiple quantum wells

GaInN/GaN multiple quantum wells GaInN/GaN MQW
Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
emission

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Applications

Area Application Nanomaterial Variant Source
photonics

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Characterization

Method Nanomaterial Variant Source
field emission scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
See all (5)
  1. uBnJ3c
  2. GYPuBpKAQVwHy
Product

GaInN/GaN multiple quantum wells grown on LT-GaN/biaxial W film

Grain size: ~ 100 - ~ 300 nm

Grain size: ~ 100 nm

Thickness: 250 - 300 nm

Medium: none

Support: SiO2/Si

References

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