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GaN film patterned with In0.18Ga0.82N/GaN MQW multilayer nanopillar array

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN p-GaN i-GaN u-GaN
Type Single Compound
Formula GaN
Role layer
2

n-type GaN

Type Complex Compound
Formula
Role layer
3

vertically aligned InGaN/GaN MQW nanopillar array

n-GaN/(InGaN/GaN MQW)/p-AlGaN/p-GaN nanopillars In0.18Ga0.82N/GaN MQW nanopillars
Type Nano Material
Formula
Role partial layer

Properties

Applications

Area Application Nanomaterial Variant Source
raw materials/precursors/templates

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
  1. MTlMiM15GIY19gWGvfwHv6wBscwDF8eoTW25oyMSWawWW4D496zB
Product

GaN film patterned with In0.18Ga0.82N/GaN MQW multilayer nanopillar array

Thickness: 1200 nm

Thickness: 2000 nm

Thickness: 2035 nm

Medium: none

Support: sapphire

References

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