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p-InGaN/n++-GaN/In0.4Ga0.6N/p++-GaN/n-GaN nanowires on n+-p silicon solar cell substrate

Based on

1 Articles
2015 Most recent source

Composition

1

n-GaN nanowire array

Type Nano Material
Formula
Role layer
2

p-doped gallium nitride

p-GaN
Type Complex Compound
Formula
Role layer
3

indium gallium nitride

In0.4Ga0.6N
Type Single Compound
Formula In0.4Ga0.6N
Role layer
4

n-doped gallium nitride

n-GaN
Type Complex Compound
Formula
Role layer
5

p-InGaN nanowires

Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Source
band gap

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Applications

Area Application Source
electrodes/electrolytes

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Characterization

Method Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • n+-p Si solar cell wafer
  • gallium nitride
  • magnesium
See all (4)
  1. 1qkqWRqnNHXMnLhCESd59bsmnGb
  2. QpSYWAjxVrLRv3ubhARwU9PbVZPKlw6gNItt4P6wLkMbTgQe4JGYq
  3. ZXLhL4mQ4XU63Bd3cjdYOv21lNLhlk7lb
Product

p-InGaN/n++-GaN/In0.4Ga0.6N/p++-GaN/n-GaN nanowires on n+-p silicon solar cell substrate

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • gallium nitride
  • magnesium
  • n+-silicon
See all (4)
  1. qLVWH2ivXbIsnupbotcaNnZ4dcW
  2. 20ONy2UDb2eSVQ1ycoFOSnSItpXLTt85qYB4BtRVWIuuIgQisncFJ
  3. exJfwXQQXS7IBwJav6i7F0iuo9ckHHAz3
Product

p-InGaN/n++-GaN/In0.4Ga0.6N/p++-GaN/n-GaN nanowires on n+-p silicon solar cell substrate

References

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