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p-InGaN/n++-GaN/In0.4Ga0.6N/p++-GaN/n-GaN nanowires on n+-p silicon solar cell substrate

Based on

1 Articles
2015 Most recent source

Composition

1

n-GaN nanowire array

Type Nano Material
Formula
Role layer
2

p-doped gallium nitride

p-GaN
Type Complex Compound
Formula
Role layer
3

indium gallium nitride

In0.4Ga0.6N
Type Single Compound
Formula In0.4Ga0.6N
Role layer
4

n-doped gallium nitride

n-GaN
Type Complex Compound
Formula
Role layer
5

p-InGaN nanowires

Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap

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Applications

Area Application Nanomaterial Variant Source
electrodes/electrolytes

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • n+-p Si solar cell wafer
  • gallium nitride
  • magnesium
See all (4)
  1. Df9j9YoQ28MR3KfTJpbzCWyFSD9
  2. y5Ok0UVLn9WLsEWVOJNY3TuGTr9SQjmmxTLMGrwfYYCr7lq467rJ1
  3. uGuCGML4KU6V9ZDhbOw1YFfpEg9DRO84n
Product

p-InGaN/n++-GaN/In0.4Ga0.6N/p++-GaN/n-GaN nanowires on n+-p silicon solar cell substrate

Thickness: 20 nm

Thickness: 4 nm

Medium: none

Support: n+-p Si solar cell wafer

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • gallium nitride
  • magnesium
  • n+-silicon
See all (4)
  1. l9FrHCsN91EyUlbZtQAZ6nY6CSk
  2. CUSbnRLme42svk8fbBW7S8C3TZe6uzkzZXamcUWRfCDPetxfmcQib
  3. Lu9mSsTVrusAa0XBxlpQwHSUMkDCUnLap
Product

p-InGaN/n++-GaN/In0.4Ga0.6N/p++-GaN/n-GaN nanowires on n+-p silicon solar cell substrate

Thickness: 20 nm

Thickness: 4 nm

Medium: none

Support: n+-silicon

References

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