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Pt NPs/p-InGaN/n++-GaN/In0.4Ga0.6N/p++-GaN/n-GaN nanowires/n+-p silicon solar cell substrate electrode

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

p-InGaN/n++-GaN/In0.4Ga0.6N/p++-GaN/n-GaN nanowires on n+-p silicon solar cell substrate

p-InGaN/tunnel junction/n-GaN nanowires on n+-p silicon solar cell substrate
Type Nano Material
Formula
Role layer
2

platinum

Type Single Compound
Formula Pt
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current density

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Applications

Area Application Nanomaterial Variant Source
electrodes/electrolytes

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Characterization

Method Nanomaterial Variant Source
STEM-HAADF

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. gaOOws
  2. ZXxR0PYIoLvfxjJ2
  3. 8gY2ezUwqwGU1Chri3waaL6t
Product

Pt NPs/p-InGaN/n++-GaN/In0.4Ga0.6N/p++-GaN/n-GaN nanowires/n+-p silicon solar cell substrate electrode

Thickness: ~ 1 nm

Medium/Support: none

References

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