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InGaAs nanowires

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium gallium arsenide

Type Single Compound
Formula In0.8Ga0.2As
Role raw materials

Properties

Applications

Area Application Nanomaterial Variant Source
lasers

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • indium
  • gallium
  1. Kp4CST
  2. VPJ
  3. DJNAp51WSX3Ua
Product

InGaAs nanowires

Diameter: 130 - 140 nm

Length: 745 - 829 nm

Medium/Support: none

References

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