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wurtzite InP-InGaAs nanowire core-shell heterostructure

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium(III) phosphide

indium phosphide
Type Single Compound
Formula InP
Role core
2

indium gallium arsenide

Type Single Compound
Formula In0.42Ga0.58As
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
strain

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Applications

Area Application Nanomaterial Variant Source
telecommunication

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Characterization

Method Nanomaterial Variant Source
energy dispersive X-ray spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • phosphine
  • indium(III) phosphide
  • trimethylindigane
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Product

wurtzite InP-InGaAs nanowire core-shell heterostructure

Diameter: 120 nm

Pattern period: 400 nm

Thickness: 10 - 40 nm

Medium: none

Support: indium(III) phosphide

References

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