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Au/HfO2/p-Si metal-oxide-semiconductor structure

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role layer
2

chromium

Type Single Compound
Formula Cr
Role layer
3

gold

Type Single Compound
Formula Au
Role layer
4

gold

Type Single Compound
Formula Au
Role partial layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance

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Applications

Area Application Nanomaterial Variant Source
lasers

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Characterization

Method Nanomaterial Variant Source
dielectric spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • tetrakis(dimethylamido)-hafnium(IV)
  • boron doped silicon
  • water
  1. CXbY1p
Product

Au/HfO2/p-Si metal-oxide-semiconductor structure

Grating height: ~ 90 nm

Grating periodicity: 360 - 480 nm

Grating width: 290 nm

Thickness: 24 nm

Thickness: 7.024 - 7.376 nm

Thickness: < 1 nm

Medium: none

Support: boron doped silicon

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • tetrakis(dimethylamido)-hafnium(IV)
  • water
  • boron doped silicon
  1. NxB0is
Product

Au/HfO2/p-Si metal-oxide-semiconductor structure

Grating height: ~ 90 nm

Grating periodicity: 460 nm

Grating width: 290 nm

Thickness: 24 nm

Thickness: 7.024 - 7.376 nm

Thickness: < 1 nm

Medium: none

Support: boron doped silicon

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • tetrakis(dimethylamido)-hafnium(IV)
  • boron doped silicon
  • water
  1. Luit8c
Product

Au/HfO2/p-Si metal-oxide-semiconductor structure

Diameter: 28200 nm

Grating height: ~ 90 nm

Grating periodicity: 460 nm

Grating width: 290 nm

Thickness: 24 nm

Thickness: 7.024 - 7.376 nm

Thickness: < 1 nm

Medium: none

Support: boron doped silicon

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • tetrakis(dimethylamido)-hafnium(IV)
  • water
  • boron doped silicon
  1. fh5nmp
Product

Au/HfO2/p-Si metal-oxide-semiconductor structure

Grating height: ~ 90 nm

Grating periodicity: 430 nm

Grating width: 290 nm

Thickness: 24 nm

Thickness: 7.024 - 7.376 nm

Thickness: < 1 nm

Medium: none

Support: boron doped silicon

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • tetrakis(dimethylamido)-hafnium(IV)
  • water
  • boron doped silicon
  1. ZGF3GA
Product

Au/HfO2/p-Si metal-oxide-semiconductor structure

Diameter: 22500 nm

Grating height: ~ 90 nm

Grating periodicity: 450 nm

Grating width: 290 nm

Thickness: 24 nm

Thickness: 7.024 - 7.376 nm

Thickness: < 1 nm

Medium: none

Support: boron doped silicon

References

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