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Ga-doped ZnO/CuxS contact

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium nitride

Type Single Compound
Formula GaN
Role layer
2

Si-doped n-GaN

n-GaN
Type Complex Compound
Formula
Role layer
3

InGaN/GaN bilayer film

InGaN/GaN film
Type Nano Material
Formula
Role layer
4

Mg-doped p-GaN

Type Complex Compound
Formula
Role layer
5

CuxS

Type Complex Compound
Formula
Role partial layer
6

Ga-doped ZnO

GZO
Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
X-ray photoelectron spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium nitride
  • indium gallium nitride
  • sapphire
See all (5)
Product

Ga-doped ZnO/CuxS contact

Thickness: 180 nm

Thickness: 200 nm

Thickness: 2500 nm

Thickness: 3500 nm

Thickness: 5 nm

Medium: none

Support: sapphire

References

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