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InGaAs QD

Based on

45 Articles
2017 Most recent source

Composition

1

indium gallium arsenide

InxGa1-xAs
Type Complex Compound
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
emission

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Applications

Area Application Nanomaterial Variant Source
photonics

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Characterization

Method Nanomaterial Variant Source
fluorescence spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • low temperature gallium arsenide
  • indium
Product

InGaAs QD

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • low temperature gallium arsenide
  • indium
Product

InGaAs QD

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • indium gallium arsenide
Product

InGaAs QD

Diameter: ~ 20 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) 2,4-pentanedionate
  • indium(III) 2,4-pentanedionate
  1. xJ9I45rm2LtEJbZoA44gmT14Q9nSAF2PQ4r
  2. 2JsA7K
  3. Cm7OsmJ
Product

InGaAs QD

Size: not specified

Medium/Support: none

References

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