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GaAs/GaInAs core-multiple-quantum-well shell nanowires surrounded by AlGaAs

Based on

1 Articles
2014 Most recent source

Composition

1

GaAs nanowires

GaAs NW
Type Nano Material
Formula
Role core
2

gallium aluminium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type Single Compound
Formula Al0.3Ga0.7As
Role layer
3

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
4

Ga0.84In0.16As

Type Single Compound
Formula Ga0.84In0.16As
Role layer
5

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
6

Ga0.84In0.16As

Type Single Compound
Formula Ga0.84In0.16As
Role layer
7

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
8

gallium aluminium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type Single Compound
Formula Al0.3Ga0.7As
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
emission

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Applications

Area Application Nanomaterial Variant Source
lighting devices

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Characterization

Method Nanomaterial Variant Source
energy dispersive X-ray spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • p-type silicon
  1. YXrkv
Product

GaAs/GaInAs core-multiple-quantum-well shell nanowires surrounded by AlGaAs

Diameter: ~ 240 - ~ 510 nm

Length: ~ 5900 - ~ 7300 nm

Thickness: ~ 12 nm

Thickness: ~ 20 nm

Thickness: ~ 25 nm

Thickness: ~ 30 nm

Thickness: ~ 40 nm

Medium: none

Support: p-type silicon

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • p-type silicon
  1. MKaLN
Product

GaAs/GaInAs core-multiple-quantum-well shell nanowires surrounded by AlGaAs

Diameter: ~ 240 - ~ 510 nm

Length: ~ 5900 - ~ 7300 nm

Thickness: 8.5 nm

Medium: none

Support: p-type silicon

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • p-type silicon
  1. cRp1k
Product

GaAs/GaInAs core-multiple-quantum-well shell nanowires surrounded by AlGaAs

Diameter: ~ 240 - ~ 510 nm

Length: ~ 5900 - ~ 7300 nm

Thickness: 6.0 nm

Medium: none

Support: p-type silicon

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • gallium
  1. tkl0v
  2. wXvTJS5t0QtA8WkmbNa
Product

GaAs/GaInAs core-multiple-quantum-well shell nanowires surrounded by AlGaAs

Diameter: ~ 428 - ~ 454 nm

Thickness: ~ 12 nm

Thickness: ~ 20 nm

Thickness: ~ 25 nm

Thickness: ~ 30 nm

Thickness: ~ 40 nm

Medium/Support: none

References

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