Loading ...

GaInAs multiple quantum well surrounded by AlGaAs

Based on

1 Articles
2014 Most recent source

Composition

1

aluminium gallium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type Single Compound
Formula Ga0.7Al0.3As
Role layer
2

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
3

Ga0.84In0.16As

Type Single Compound
Formula Ga0.84In0.16As
Role layer
4

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
5

Ga0.84In0.16As

Type Single Compound
Formula Ga0.84In0.16As
Role layer
6

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
7

aluminium gallium arsenide

gallium aluminium arsenide aluminum gallium arsenide
Type Single Compound
Formula Ga0.7Al0.3As
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
emission

More information available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
lighting devices

More information/entries available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
photoluminescence

More information available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium arsenide
  • aluminium
  • arsenic
See all (5)
  1. z3R8o
  2. 5Qtz2DZJnrY3oGZZa1DZzXe3LF
Product

GaInAs multiple quantum well surrounded by AlGaAs

Thickness: 8 nm

Medium: none

Support: gallium arsenide

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial