Loading ...

InAs/GaAs quantum dots with GaAs cap layer

Based on

3 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

InAs/GaAs QD

Type Nano Material
Formula
Role layer
2

gallium arsenide

Type Single Compound
Formula GaAs
Role layer

Properties

Applications

Area Application Nanomaterial Variant Source
data storage

More information/entries available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
CMDS

More information/entries available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Product

InAs/GaAs quantum dots with GaAs cap layer

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • gallium arsenide buffer layer-coated n-type gallium arsenide substrate
  • trimethylindigane
  • arsine
  1. lvy1iwEiGEv6MCv
  2. K80db24nArrLwxhNokwousImIPG9
  3. r43l0F5hSeaw2qo7q87bImFWFqqwmR
  4. qqJh3zbeM3LQVF9C4
Product

InAs/GaAs quantum dots with GaAs cap layer

Thickness: 60 nm

Medium: none

Support: gallium arsenide buffer layer-coated n-type gallium arsenide substrate

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • gallium arsenide buffer layer-coated n-type gallium arsenide substrate
  • trimethylindigane
  • arsine
  1. 99TKCtHZc7PrX8C
  2. J8uQxMHcaM9N2ZtivMCLbrP9gaWX
  3. B7eecxA13nC21swuA42YhaEvct8Ii5
  4. zYDZMua9OaR0WHZCf
Product

InAs/GaAs quantum dots with GaAs cap layer

Thickness: 60 nm

Medium: none

Support: gallium arsenide buffer layer-coated n-type gallium arsenide substrate

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial