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nano epitaxial lateral overgrown GaN on nanoporous silica

Based on

1 Articles
2010 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type Single Compound
Formula GaN
Role layer
2

nanoporous SiO2 mask

Type Nano Material
Formula
Role layer
3

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type Single Compound
Formula GaN
Role layer

Properties

Applications

Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) arsenide
  1. v7bk6PX46zHHGLNcQ
  2. RB4Rs
Product

nano epitaxial lateral overgrown GaN on nanoporous silica

Size: not specified

Medium/Support: none

References

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