Loading ...

Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

indium gallium nitride/gallium nitride multiple quantum well structure

Based on

1 Patents
2012 Most recent source

Composition

1

indium gallium nitride

In0.1Ga0.9N
Type Single Compound
Formula In0.1Ga0.9N
Role layer
2

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type Single Compound
Formula GaN
Role layer
3

indium gallium nitride

In0.1Ga0.9N
Type Single Compound
Formula In0.1Ga0.9N
Role layer
4

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type Single Compound
Formula GaN
Role layer
5

indium gallium nitride

In0.1Ga0.9N
Type Single Compound
Formula In0.1Ga0.9N
Role layer
6

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type Single Compound
Formula GaN
Role layer

Properties

Applications

Area Application Nanomaterial Variant Source
lighting devices

More information available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • trimethylindigane
  • trimethanidogallium
  1. WfzySlzmSyIxbkG0C45CEMSY4LEB
Product

indium gallium nitride/gallium nitride multiple quantum well structure

Thickness: 20 nm

Thickness: 3 nm

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial