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indium gallium nitride/gallium nitride multiple quantum well structure

Based on

1 Patents
2012 Most recent source

Composition

1

indium gallium nitride

In0.1Ga0.9N
Type Single Compound
Formula In0.1Ga0.9N
Role layer
2

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type Single Compound
Formula GaN
Role layer
3

indium gallium nitride

In0.1Ga0.9N
Type Single Compound
Formula In0.1Ga0.9N
Role layer
4

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type Single Compound
Formula GaN
Role layer
5

indium gallium nitride

In0.1Ga0.9N
Type Single Compound
Formula In0.1Ga0.9N
Role layer
6

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type Single Compound
Formula GaN
Role layer

Properties

Applications

Area Application Source
lighting devices

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • trimethylindigane
  • trimethanidogallium
  1. JT9nQzf8zY2ieUuBcev91VAAWHO3
Product

indium gallium nitride/gallium nitride multiple quantum well structure

References

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