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[p-InGaN/GaN]3/p-GaN:Mg/p-AlGaN:Mg/[InGaN/GaN multiple quantum well]/n-GaN:Si/u-GaN/LT-GaN/sapphire

Based on

1 Articles
2014 Most recent source

Composition

1

gallium nitride

Type Single Compound
Formula GaN
Role layer
2

unintentionally doped gallium nitride

Type Complex Compound
Formula
Role layer
3

n-GaN:Si

Type Complex Compound
Formula
Role layer
4

InGaN/GaN multiple quantum well

InGaN/GaN MQW
Type Nano Material
Formula
Role layer
5

p-AlGaN:Mg

Type Complex Compound
Formula
Role layer
6

p-GaN:Mg

Type Complex Compound
Formula
Role layer
7

p-GaN:Mg

Type Complex Compound
Formula
Role layer
8

p-InGaN/GaN short-period superlattice

p-InGaN/GaN SPS
Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Source
dominant wavelength

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • trimethanidogallium
  • sapphire
Product

[p-InGaN/GaN]3/p-GaN:Mg/p-AlGaN:Mg/[InGaN/GaN multiple quantum well]/n-GaN:Si/u-GaN/LT-GaN/sapphire

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • trimethanidogallium
  • sapphire
Product

[p-InGaN/GaN]3/p-GaN:Mg/p-AlGaN:Mg/[InGaN/GaN multiple quantum well]/n-GaN:Si/u-GaN/LT-GaN/sapphire

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • trimethanidogallium
  • sapphire
Product

[p-InGaN/GaN]3/p-GaN:Mg/p-AlGaN:Mg/[InGaN/GaN multiple quantum well]/n-GaN:Si/u-GaN/LT-GaN/sapphire

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • trimethanidogallium
  • sapphire
Product

[p-InGaN/GaN]3/p-GaN:Mg/p-AlGaN:Mg/[InGaN/GaN multiple quantum well]/n-GaN:Si/u-GaN/LT-GaN/sapphire

References

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