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submicron layer of Si1-xGex solid solution grown on SOS structure

Based on

3 Articles
3 Patents
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

Si1-xGex

Type Complex Compound
Formula
Role raw materials

Properties

Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • sapphire
  1. devqiTa
  2. cMcEp
Product

submicron layer of Si1-xGex solid solution grown on SOS structure

RMS roughness: 7.2 nm

Thickness: 100 nm

Medium: none

Support: SOS structure

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • sapphire
  1. QAXdM82
  2. ut3ws
Product

submicron layer of Si1-xGex solid solution grown on SOS structure

RMS roughness: 2.6 nm

Thickness: 100 nm

Medium: none

Support: SOS structure

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • sapphire
  1. IvT6ByN
  2. 0Cehf
Product

submicron layer of Si1-xGex solid solution grown on SOS structure

RMS roughness: 2.1 nm

Thickness: 100 nm

Medium: none

Support: SOS structure

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • dichlorosilane
  1. 78onfBM8ZKlCDzyeR4aZLhWzot8stA1w6lEezRxYZS
  2. ar4YSCrK
  3. B5XS5bpeWsUJEn1d
Product

submicron layer of Si1-xGex solid solution grown on SOS structure

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • silicon-germanium
  • crystalline silicon
Product

submicron layer of Si1-xGex solid solution grown on SOS structure

Thickness: 10 nm

Medium: none

Support: crystalline silicon

References

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