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semiconductor nanocrystal with GaP and ZnS shell layer on InP/ZnS core

Based on

1 Patents
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

semiconductor nanocrystal with InP/ZnS core

Type Nano Material
Formula
Role core
2

gallium(III) phosphide

gallium phosphide GaP B
Type Single Compound
Formula GaP
Role layer
3

zinc sulfide

Type Single Compound
Formula ZnS
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
photoefficiency

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Applications

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • tris(trimethylsilyl) phosphine
  • trimethanidogallium
  1. wVU9lHJpW4RXEkBcT
Product

semiconductor nanocrystal with GaP and ZnS shell layer on InP/ZnS core

Size: not specified

Medium/Support: none

References

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