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patterned PS film

Based on

17 Articles
1 Patents
2017 Most recent source

Composition

1

polystyrene

PS
Type Polymer
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
sensor for polystyrene nanoparticles in KCl aqueous solution with Triton X-100

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Applications

Area Application Nanomaterial Variant Source
analysis methods

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Biological system Test details Nanomaterial Variant Source
enzymatically dissociated human embryonic stem cells (hESC)

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • styrene
  1. sFmHn9ae0xyyOoHGqTDN8
  2. tRhUx8QFqgYscChawsln
  3. pSVFGUK
  4. K0DZX
Product

patterned PS film

Diameter: ~ 400 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • polystyrene
  1. DmWBeyvl9CZm0UFmZ
  2. vnMhSPa
Product

patterned PS film

Crater depth: 420 nm

Crater diameter: 1100 nm

Crater lip height: 120 nm

Intercrater spacing: 6000 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • polystyrene
  1. UaanU1ja8wl1r4lVKW
Product

patterned PS film

Gap between lines: 3000 nm

Line height: 500 nm

Line width: 12000 nm

Nanoline width: 800 nm

Thickness: 1000 nm

Medium: none

Support: silicon

Method 4

Type: Physical formation
Source:
Starting materials
  1. FSE6e6OONqKSFq2fcLuwOp6iIlrwGtxyjCzFW4blzYEC4SlNBHmWuj1Jpinf9k5YwMe59JK9piwIhYxfuwPoO9xXpkFgCem2xlPY2uJBNNgcvARrx38hhuXppsTUnnTjD8J80yG
Product

patterned PS film

Coronal height: 130 nm

Diameter: 200 nm

Gap size: 10 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  1. wJHH6bSLwFlUQ63iDP
  2. dgvTE
  3. ahq2wNr
  4. 34JlV
Product

patterned PS film

Line height: ~ 0 - ~ 330 nm

Line spacing: ~ 210 - ~ 400 nm

Line width: ~ 210 - ~ 400 nm

Pattern pitch: ~ 420 - ~ 800 nm

Residual layer thickness: ~ 100 nm

Medium/Support: none

References

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