Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

Al0.15Ga0.85As/GaAs/In0.12Ga0.88As stepped quantum well

Based on

1 Articles
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

aluminium gallium arsenide

Al-doped GaAs
Type Single Compound
Formula Al0.15Ga0.85As
Role layer
2

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
3

indium gallium arsenide

In0.12Ga0.88As
Type Single Compound
Formula In0.12Ga0.88As
Role layer

Properties

General physical and chemical properties

Property Value Source
absorption coefficient

1 more entry available to subscribers only.

Or, view sample content

Applications

Characterization

Biological effects

Preparation

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial