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Si/TaN(x)/Cu metallization stack

Based on

1 Articles
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

tantalum nitride

a-TaNx
Type Single Compound
Formula TaN(x)
Role layer
2

copper

Type Single Compound
Formula Cu
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electrical resistivity

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
energy dispersive X-ray spectroscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • n-type silicon
  • tantalum nitride
  1. wFwOcniM2anOD
  2. oh
Product

Si/TaN(x)/Cu metallization stack

Thickness: 14 nm

Thickness: 227 - 255 nm

Medium: none

Support: n-type silicon

Method 2

Type: Physical formation
Source:
Starting materials
  • n-type silicon
  • tantalum nitride
  1. 2tHZ4nVS3AIgQ
  2. Bm
Product

Si/TaN(x)/Cu metallization stack

Thickness: 227 - 255 nm

Thickness: 62 nm

Medium: none

Support: n-type silicon

Method 3

Type: Physical formation
Source:
Starting materials
  • n-type silicon
  • tantalum nitride
  1. GGYgMtI2uRqCA
  2. h6
Product

Si/TaN(x)/Cu metallization stack

Thickness: 14 nm

Thickness: 227 - 255 nm

Medium: none

Support: n-type silicon

Method 4

Type: Physical formation
Source:
Starting materials
  • n-type silicon
  • tantalum nitride
  1. nax8nqn1znFxf
  2. sK
Product

Si/TaN(x)/Cu metallization stack

Thickness: 227 - 255 nm

Thickness: 62 nm

Medium: none

Support: n-type silicon

References

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