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GaAsN-capped InAs QW

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

example of semiconductor nanoparticles

example of semiconductor quantum dots indium(III) arsenide quantum dots indium monoarsenide quantum dots indium arsenide quantum dots example of quantum dots InAs quantum dots InAs quantum dot example of QD InAs QD layer InAs QD
Type Nano Material
Formula
Role layer
2

GaAsN quantum well

N-doped GaAs QW
Type Nano Material
Formula
Role layer

Properties

Applications

Area Application Source
optoelectronics

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Characterization

Method Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • n+-doped GaAs
  • indium(III) arsenide
  1. VFeUVH
Product

GaAsN-capped InAs QW

Method 2

Type: Physical formation
Source:
Starting materials
  • n+-doped GaAs
  • indium(III) arsenide
  1. 3ntNLc
Product

GaAsN-capped InAs QW

Method 3

Type: Physical formation
Source:
Starting materials
  • n+-doped GaAs
  • indium(III) arsenide
  1. 01UWL3
Product

GaAsN-capped InAs QW

Method 4

Type: Physical formation
Source:
Starting materials
  • n+-doped GaAs
  • indium(III) arsenide
  1. 0bR2C8
Product

GaAsN-capped InAs QW

References

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