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Sb/N-doped GaAs quantum well

Based on

1 Articles
2014 Most recent source

Composition

1

gallium arsenide

Type Single Compound
Formula GaAs
Role raw materials
2

antimony

Type Single Compound
Formula Sb
Role dopant
3

atomic nitrogen

nitrogen atom
Type Single Compound
Formula N
Role dopant

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
emission

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Applications

Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
  1. IlT5fT
  2. Zv8dYvZk
Product

Sb/N-doped GaAs quantum well

Thickness: 7.5 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
  1. 6GuuIt
  2. WKSHhWGG
Product

Sb/N-doped GaAs quantum well

Thickness: 2.5 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
  1. nGfTEy
  2. juTd82Jp
  3. PeiWzipm8Gp4rwKhzq4rrs90wJv0fn1osp
Product

Sb/N-doped GaAs quantum well

Thickness: 5 nm

Medium/Support: none

References

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