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GaAsSbN-capped InAs QW

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

example of semiconductor nanoparticles

example of semiconductor quantum dots indium(III) arsenide quantum dots indium monoarsenide quantum dots indium arsenide quantum dots example of quantum dots InAs quantum dots InAs quantum dot example of QD InAs QD layer InAs QD
Type Nano Material
Formula
Role layer
2

Sb/N-doped GaAs quantum well

GaAsSbN QW
Type Nano Material
Formula
Role layer

Properties

Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • n+-doped GaAs
  • indium(III) arsenide
  1. AX7Q5K
Product

GaAsSbN-capped InAs QW

Size: not specified

Medium: none

Support: n+-doped GaAs

Method 2

Type: Physical formation
Source:
Starting materials
  • n+-doped GaAs
  • indium(III) arsenide
  1. QogsHj
Product

GaAsSbN-capped InAs QW

Size: not specified

Medium: none

Support: n+-doped GaAs

Method 3

Type: Physical formation
Source:
Starting materials
  • n+-doped GaAs
  • indium(III) arsenide
  1. FEKNrA
Product

GaAsSbN-capped InAs QW

Size: not specified

Medium: none

Support: n+-doped GaAs

Method 4

Type: Physical formation
Source:
Starting materials
  • n+-doped GaAs
  • indium(III) arsenide
  1. xtmJiZ
Product

GaAsSbN-capped InAs QW

Size: not specified

Medium: none

Support: n+-doped GaAs

Method 5

Type: Physical formation
Source:
Starting materials
  • n+-doped GaAs
  • indium(III) arsenide
  1. 8RXFMo
Product

GaAsSbN-capped InAs QW

Size: not specified

Medium: none

Support: n+-doped GaAs

References

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