Loading ...

Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

InGaN-based double-heterostructure

Based on

1 Articles
2012 Most recent source

Composition

1

gallium nitride

Type Single Compound
Formula GaN
Role layer
2

AlGaN/GaN

Type Nano Material
Formula
Role layer
3

gallium nitride

Type Single Compound
Formula GaN
Role layer
4

silicon

Type Single Compound
Formula Si
Role dopant
5

double-heterostructure active region material

AlGaN/GaN
Type Nano Material
Formula
Role layer
6

AlGaN/GaN

Type Nano Material
Formula
Role layer
7

gallium nitride

Type Single Compound
Formula GaN
Role layer
8

magnesium

Type Single Compound
Formula Mg
Role dopant

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current-voltage plot

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
lighting devices

More information/entries available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
electroluminescence

More information/entries available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • trimethanidogallium
  1. vFWVwf
  2. io9eZD0
Product

InGaN-based double-heterostructure

Thickness: 100 nm

Thickness: 1325 nm

Thickness: 3000 nm

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial