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InGaN-based double-heterostructure

Based on

1 Articles
2012 Most recent source

Composition

1

gallium nitride

Type Single Compound
Formula GaN
Role layer
2

AlGaN/GaN

Type Nano Material
Formula
Role layer
3

gallium nitride

Type Single Compound
Formula GaN
Role layer
4

silicon

Type Single Compound
Formula Si
Role dopant
5

double-heterostructure active region material

AlGaN/GaN
Type Nano Material
Formula
Role layer
6

AlGaN/GaN

Type Nano Material
Formula
Role layer
7

gallium nitride

Type Single Compound
Formula GaN
Role layer
8

magnesium

Type Single Compound
Formula Mg
Role dopant

Properties

General physical and chemical properties

Property Value Source
current-voltage plot

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Applications

Area Application Source
lighting devices

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Characterization

Method Source
electroluminescence dependent on forward current densities

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • trimethanidogallium
  1. Os189w
  2. RsSDf7W
Product

InGaN-based double-heterostructure

References

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