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Pt Schottky contacts on n-Al0.08In0.08 Ga0.84N grown on sapphire substrate

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

aluminium nitride

aluminum nitride
Type Single Compound
Formula AlN
Role layer
2

n-Al0.08In0.08Ga0.84N

Type Single Compound
Formula Al0.08In0.08Ga0.84N
Role layer
3

platinum

Type Single Compound
Formula Pt
Role partial layer

Properties

Applications

Area Application Source
electronics

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
  1. fAsBQQ
  2. IjlEf7OTwlXMtQYvpdZjt1
Product

Pt Schottky contacts on n-Al0.08In0.08 Ga0.84N grown on sapphire substrate

Method 2

Type: Physical formation
Source:
  1. Zn3z8L
  2. 8uNtvDlqzXJAc8l15UNSiW
Product

Pt Schottky contacts on n-Al0.08In0.08 Ga0.84N grown on sapphire substrate

Method 3

Type: Physical formation
Source:
Starting materials
  • aluminium nitride
  • sapphire
Product

Pt Schottky contacts on n-Al0.08In0.08 Ga0.84N grown on sapphire substrate

References

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