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InAs/GaSb nanowire heterojunction

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

Zn-doped GaSb

Type Complex Compound
Formula
Role raw materials
2

indium(III) arsenide

indium monoarsenide indium arsenide
Type Single Compound
Formula InAs
Role raw materials

Properties

General physical and chemical properties

Property Value Source
change in peak tunnel current profile

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Applications

Area Application Source
electronics

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • trimethylindigane
  • arsine
  • indium(III) arsenide
See all (4)
  1. DkZnRk2UaEnBi
  2. HBMmBLS9f3JheEVX46Sa4X
  3. NPeS8
Product

InAs/GaSb nanowire heterojunction

References

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