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GaAs/Si-doped Al0.33Ga0.67As/Al0.33Ga0.67As/GaAs quantum well inserted with monolayer of InAs quantum dots/Al0.33Ga0.67As on semi-insulating GaAs (001) substrate

Based on

1 Articles
2013 Most recent source

Composition

1

gallium aluminium arsenide

gallium aluminium arsenide aluminum gallium arsenide Al0.33Ga0.67As GaAlAs
Type Single Compound
Formula Al0.33Ga0.67As
Role layer
2

GaAs quantum well inserted with monolayer of InAs quantum dots

Type Nano Material
Formula
Role layer
3

gallium aluminium arsenide

gallium aluminium arsenide aluminum gallium arsenide Al0.33Ga0.67As GaAlAs
Type Single Compound
Formula Al0.33Ga0.67As
Role layer
4

Si-doped Al0.33Ga0.67As

Type Complex Compound
Formula
Role layer
5

gallium arsenide

Type Single Compound
Formula GaAs
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
2D charge carrier density

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Applications

Characterization

Biological effects

Preparation

References

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