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H-implanted GaN epitaxial layer

Based on

1 Articles
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium nitride

Type Single Compound
Formula GaN
Role layer
2

hydrogen cation

hydrogen ion proton H+ ion H+
Type Single Compound
Formula H1+
Role dopant

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
damage band

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Applications

Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium nitride
  • hydrogen
  • sapphire
  1. KXV6mi9u0QJ6cji
Product

H-implanted GaN epitaxial layer

Blister diameter: ~ 5 - 30 nm

Crater depth: ~ 580 nm

Roughness bottom crater: ~ 12 nm

Thickness: ~ 4000 nm

Medium: none

Support: sapphire

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • gallium nitride
  • hydrogen
  • sapphire
  1. ym8ma
Product

H-implanted GaN epitaxial layer

Blister diameter: ~ 5000 - 20000 nm

Cracks: ~ 150 - 200 nm

Crater depth: ~ 650 nm

Roughness bottom crater: ~ 8 nm

Thickness: ~ 4000 nm

Medium: none

Support: sapphire

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • gallium nitride
  • hydrogen
  • sapphire
  1. 0tZQX3Sc1FvghoeV
Product

H-implanted GaN epitaxial layer

Blister diameter: ~ 5000 - 40000 nm

Crater depth: ~ 620 nm

Roughness bottom crater: ~ 8 nm

Thickness: ~ 4000 nm

Void size: ~ 1 - 2 nm

Medium: none

Support: sapphire

References

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