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indium-gallium nitride/gallium nitride multiple quantum wells

Based on

1 Articles
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium nitride

Type Single Compound
Formula GaN
Role layer
2

gallium nitride

Type Single Compound
Formula GaN
Role layer
3

gallium nitride

Type Single Compound
Formula GaN
Role layer
4

gallium indium nitride

gallium indium nitride indium-gallium nitride InGaN GaInN
Type Single Compound
Formula GaInN
Role layer
5

gallium nitride

Type Single Compound
Formula GaN
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
emission

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Applications

Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • trimethanidogallium
Product

indium-gallium nitride/gallium nitride multiple quantum wells

Thickness: 10 nm

Thickness: 20 nm

Thickness: 2000 nm

Thickness: 3 nm

Thickness: 30 nm

Medium/Support: none

References

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