Loading ...

Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

nanohole array

Based on

13 Articles
2017 Most recent source

Composition

1

P-doped silicon

Type Complex Compound
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation energy for dark conductivity

More information/entries available to subscribers only.

Or, view sample content

Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
temperature sensor

More information available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
data storage

More information/entries available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

More information/entries available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. KnGQI7pNLE2XhIPhKdYfdyH7FbK8yfqBV5rs68LpfuZaKSknn8PZHNXVrcpKLIlhEJa7l2i1AzoCm47ABZaLIq0Ce5bVA
  2. zqMGn
Product

nanohole array

Hole depth: ~ 1200 nm

Hole diameter: 40 nm

Hole periodicity: ~ 100 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • P-doped silicon
  1. xF2u1hWBfRkdLnlBxt32qFqjyXeW6rdkpjJDa0KlUVI0KL76r
  2. sh5gh3UCivSuapAet5nSO6
Product

nanohole array

Hole diameter: ~ 707 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • boron p-doped silicon
  1. om25BF0gs68GLEBT0GujkPm4tgnJhEsLwl0a0r4KauHvZvKCdOTLk1Q42X2
  2. IaghhnZ
Product

nanohole array

Dot diameter: 200 nm

Dot pitch: 300 nm

Dot spacing: 100 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • boron p-doped silicon
  1. vsMqW66hx1Yyaj14dPqRz9AZ8DyFKlQXVWQvfCq0N5uIa2kVisPqigpr2Wl
  2. iiGBhSs
Product

nanohole array

Dot diameter: 900 nm

Dot pitch: 1000 nm

Dot spacing: 100 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • P-doped silicon
  1. erUdlfqmr5AL8he5gScz1kssqYmyJn0rTRFeqq0ni51gZ0Xcj
  2. XERpCwi7WTlgFVSeddflsVRCY
Product

nanohole array

Hole depth: ~ 220 nm

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial