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sulfur monochloride-passivated Te-doped n-GaAs ((110))

Based on

1 Articles
2013 Most recent source

Composition

1

gallium arsenide

Type Single Compound
Formula GaAs
Role raw materials
2

tellurium

Type Single Compound
Formula Te
Role dopant
3

arsenic oxide/gallium oxide

Type Complex Compound
Formula
Role layer
4

arsenic sulfide

Type Single Compound
Formula AsS(x)
Role layer

Properties

Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
energy dispersive X-ray spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. GKK
  2. oJO8JrNBeBCXHC
  3. bhpd
Product

sulfur monochloride-passivated Te-doped n-GaAs ((110))

Size: not specified

Medium/Support: none

References

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