Loading ...

Al2O3 coated InAs NW array

Based on

3 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium(III) arsenide

indium monoarsenide indium arsenide
Type Single Compound
Formula InAs
Role core
2

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
absorbance

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
coatings

More information/entries available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
fluorescence microscopy

More information/entries available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • trimethylindigane
  • tertiary butyl arsine
  1. TeVbO431tR3
Product

Al2O3 coated InAs NW array

Diameter: 59 - 65 nm

Length: 1840 - 2240 nm

Periodicity: 450 nm

Thickness: 30 nm

Medium: none

Support: indium(III) arsenide

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • trimethylindigane
  • tertiary butyl arsine
  1. r6sWQijTh4N
Product

Al2O3 coated InAs NW array

Diameter: 59 - 65 nm

Length: 1840 - 2240 nm

Periodicity: 450 nm

Thickness: 20 nm

Medium: none

Support: indium(III) arsenide

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • trimethylindigane
  • tertiary butyl arsine
  1. qaE0nClMIrP
Product

Al2O3 coated InAs NW array

Diameter: 59 - 65 nm

Length: 1840 - 2240 nm

Periodicity: 450 nm

Thickness: 10 nm

Medium: none

Support: indium(III) arsenide

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • trimethylindigane
  • tertiary butyl arsine
  1. 6MnyUBsLXTF
Product

Al2O3 coated InAs NW array

Diameter: 59 - 65 nm

Length: 1840 - 2240 nm

Periodicity: 450 nm

Thickness: 40 nm

Medium: none

Support: indium(III) arsenide

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • trimethylindigane
  • tertiary butyl arsine
  1. jLIzlpBoJ3x
Product

Al2O3 coated InAs NW array

Diameter: 59 - 65 nm

Length: 1840 - 2240 nm

Periodicity: 450 nm

Thickness: 70 nm

Medium: none

Support: indium(III) arsenide

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial