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nano-hole structured GaN substrate

Based on

1 Articles
1 Patents
2010 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type Single Compound
Formula GaN
Role raw materials

Properties

Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium(III) arsenide
  1. I8h3Hr3fFAXj7o8BKiEji1o2iMsu0FRq46moEYtTCPwwKU4rIZrj3im24X2V6Atl7HEVvSiwaxfJFSOZjAiijf8E66Xy39SD4jdGZTSlMqCkm0x
Product

nano-hole structured GaN substrate

Method 2

Type: Physical formation
Source:
Starting materials
  • gallium(III) arsenide
  1. 805lyXie7mLeU1y4uf9PnZMxCxnPQYou1bUWy3f
  2. rUjVwDsy4Cwa3ZRXvNje97VO7iq5MeyVeOLlxBdNFruLFwmTKWytWHGI2Ma0MeSWAFqLlWzSJPBTgyAxjd1MuDx9yY8DMSpbLTl59rEqOjOgfuj
Product

nano-hole structured GaN substrate

Method 3

Type: Physical formation
Source:
Starting materials
  • gallium(III) arsenide
  1. 4GsJ183UrcI5vwn3KrLSMPcDJjNRvDal7mBGxBV
  2. IZJHIcMpqUsImINt0QVxfCHUCCy4EGvkleLEweNWLGoH6Vj3AckYWBCowqOKSEcyuM2aWoK1QmLvR1Fev6exLoRrxyAtffH3qurRGffqgTKShi1
Product

nano-hole structured GaN substrate

Method 4

Type: Physical formation
Source:
Starting materials
  • gallium(III) arsenide
  1. Z8Tmy18JeVDTls90nNuBJyJDRwhbXMu76jyZY3lNy4ck79YvXfCYcjFaNc8BptcvUEA0yufZV4LrK3ZB7cCy5vnAwPc7W1y3CtrL1nguPl5xEIch
Product

nano-hole structured GaN substrate

Method 5

Type: Physical formation
Source:
Starting materials
  • gallium(III) arsenide
  1. Deg4OxDmSrffeLurha6C0jCBulP3IHHnADpJ1PbQoQGI0CWVBNIWthk7TSkT3SddAJtmL2izkEVrSWWgW4bw8UZJ1UF3Ye3WgADRvwAuYPfoUx
Product

nano-hole structured GaN substrate

References

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