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nano-hole structured GaN substrate

Based on

1 Articles
1 Patents
2010 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type Single Compound
Formula GaN
Role raw materials

Properties

Applications

Area Application Source
lighting devices

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium(III) arsenide
  1. JCA5XM4CSVNKzOROVJnqUTRqLdCuOUiABZD16oj2qj49lWwZgYmbWBIIuaAcIRRx16JFcqmxvxqLFLltEVZkt4UnupJn1gYA03takPItbqXvQRf
Product

nano-hole structured GaN substrate

Method 2

Type: Physical formation
Source:
Starting materials
  • gallium(III) arsenide
  1. 4CtjL1IB9SaJgT89bYgjPCOGQZHCe3jxiDoRloE
  2. U0wFjYD37KjXOt35D2UK3eyySgVUJg79R2idHesci842FRWxYlqgdGfJB8aYkmlDthCuNhqkP3O0QUFZwYfXghEOLuRYFAx3myoA27xNQTB0rhC
Product

nano-hole structured GaN substrate

Method 3

Type: Physical formation
Source:
Starting materials
  • gallium(III) arsenide
  1. IiLCe7klJBI4VOtLMTv2cmxWI0mhQs8mQ9MUx46
  2. Q1E0UHtZj4KAfS4SGKPWxKzAE7ifRiv7KkAGXKoCxaM77Kp9n26sE0GMEcBaHeIySw6IX6dUgnSIoTF1q0IsMMviBMeOGrv8Wpsj3du4XqB8bXw
Product

nano-hole structured GaN substrate

Method 4

Type: Physical formation
Source:
Starting materials
  • gallium(III) arsenide
  1. sw1iup9MNvQsFn3vUi4DtiGVrrnM3a28r5mnoWlZUwfxlxuabEaBUm4ZLl4SBVJN7jj8MB2zIUXUKAFalqWbLnb30HpQuoIJdjdGMgbRkHBEyaEl
Product

nano-hole structured GaN substrate

Method 5

Type: Physical formation
Source:
Starting materials
  • gallium(III) arsenide
  1. 3OkbgKWtoF5PQJzoMcXiBsE7JbU7rCFSE932BVKimZg64MHHT2xXpChyw6UuHCnFf22IsRyPHI8pWniFa82pAGfRVWIvRcQE5nssdAa4zf85qB
Product

nano-hole structured GaN substrate

References

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