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n-CuIn3Se5 photoabsorber film on ITO

Based on

1 Articles
2011 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

copper indium selenide

Type Complex Compound
Formula
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
photoconductivity

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • copper indium selenide
  • indium tin oxide
  1. h02FsW
  2. okYfZ9UO3c9Yc28mdU
Product

n-CuIn3Se5 photoabsorber film on ITO

Grain size: ~ 20 nm

Thickness: 430 nm

Medium: none

Support: indium tin oxide

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • copper indium selenide
  • indium tin oxide
  1. 77qCrn
  2. PFlCQ1M9IA3uzaA8c1
Product

n-CuIn3Se5 photoabsorber film on ITO

Grain size: ~ 20 nm

Thickness: 430 nm

Medium: none

Support: indium tin oxide

References

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