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InGaN/GaN nanostructure film

Based on

1 Articles
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium nitride

Type Single Compound
Formula GaN
Role layer
2

gallium nitride

Type Single Compound
Formula GaN
Role layer
3

In0.21Ga0.79N

Type Single Compound
Formula In0.21Ga0.79N
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
heterogeneous strain

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Applications

Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • trimethanidogallium
  1. oLgPO9VY
  2. rSebB
Product

InGaN/GaN nanostructure film

Lateral coherence length: 2250 nm

Lateral coherence length: 50.0 nm

RMS roughness: 0.5 nm

Thickness: 10 nm

Thickness: 150 nm

Thickness: 2300 nm

Vertical coherence length: 50.0 nm

Vertical coherence length: 56.2 nm

Medium/Support: none

References

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