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GaAs/InAs QD/GaAs/GaAs/InAs QD layer stack

Based on

1 Articles
2013 Most recent source

Composition

1

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
2

example of semiconductor nanoparticles

example of semiconductor quantum dots indium(III) arsenide quantum dots indium monoarsenide quantum dots indium arsenide quantum dots example of quantum dots InAs quantum dots InAs quantum dot InAs QD layer example of QD InAs QD
Type Nano Material
Formula
Role layer
3

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
4

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
5

example of semiconductor nanoparticles

example of semiconductor quantum dots indium(III) arsenide quantum dots indium monoarsenide quantum dots indium arsenide quantum dots example of quantum dots InAs quantum dots InAs quantum dot InAs QD layer example of QD InAs QD
Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation energy

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Applications

Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
  1. HgRubddbp
Product

GaAs/InAs QD/GaAs/GaAs/InAs QD layer stack

Size: ~ 2 - 9 nm

Thickness: 10 nm

Thickness: 400 nm

Thickness: 90 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
  1. nkilwIWTj
Product

GaAs/InAs QD/GaAs/GaAs/InAs QD layer stack

Size: ~ 2 - 6.5 nm

Thickness: 10 nm

Thickness: 400 nm

Thickness: 90 nm

Medium/Support: none

References

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