Loading ...

Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

InGaN/GaN nanostructure film

Based on

1 Articles
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium nitride

Type Single Compound
Formula GaN
Role layer
2

gallium nitride

Type Single Compound
Formula GaN
Role layer
3

In0.69Ga0.31N

Type Single Compound
Formula In0.69Ga0.31N
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
heterogeneous strain

More information/entries available to subscribers only.

Or, view sample content

Applications

Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

More information/entries available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ammonia
  • trimethanidogallium
  1. nWtlmME6
  2. bQJ4S
Product

InGaN/GaN nanostructure film

Lateral coherence length: 16.1 nm

Lateral coherence length: 4500 nm

RMS roughness: 31.2 nm

Thickness: 10 nm

Thickness: 150 nm

Thickness: 2300 nm

Vertical coherence length: 45.0 nm

Vertical coherence length: 45.4 nm

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial