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etched Si/Ge nanowire-grown wafer

Based on

1 Articles
2013 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role layer
2

gold

Type Single Compound
Formula Au
Role layer
3

silicon nanowires

Si nanowires Si NW
Type Nano Material
Formula
Role layer
4

germanium

Type Single Compound
Formula Ge
Role layer
5

silicon-rich silicon oxide

SRSO SiOx
Type Single Compound
Formula SiO(x)
Role layer
6

substoichiometric germanium oxide

germanium partially oxidized germanium suboxide germanium oxide GeOx (x < 2) Ge oxide
Type Single Compound
Formula GeO(x)
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
emission

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Applications

Area Application Nanomaterial Variant Source
lighting devices

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Characterization

Method Nanomaterial Variant Source
energy dispersive X-ray spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
  1. H4TXKhvG3lDcPAHjTOq4bBvZd
Product

etched Si/Ge nanowire-grown wafer

Length: ~< 360 nm

Thickness: 100 nm

Thickness: ~< 20 nm

Medium/Support: none

References

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