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Si (9 ML)/Ge (3 ML) SL of 39 periods with buffer layer of Si grown on phosphorus-doped Si(111) substrate

Based on

1 Articles
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

crystalline silicon

c-Si cSi
Type Single Compound
Formula Si
Role layer
2

ultra-thin Si (9 ML)/Ge (3 ML) multilayer

Type Nano Material
Formula
Role layer
3

germanium

Type Single Compound
Formula Ge
Role fillers
4

silicon

Type Single Compound
Formula Si
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
dielectric function

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si(111) with buffer layer of Si
  • silicon
  • germanium
Product

Si (9 ML)/Ge (3 ML) SL of 39 periods with buffer layer of Si grown on phosphorus-doped Si(111) substrate

Interdot spacing: 400 - ~ 2000 nm

Lateral size: ~ 250 nm

Thickness: 200 nm

Thickness: 5 nm

Medium: none

Support: phosphorus-doped Si

References

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