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Image only illustrates the order and placement of components as described in literature.
Si (9 ML)/Ge (3 ML) SL of 39 periods with buffer layer of Si grown on phosphorus-doped Si(111) substrate
Interdot spacing: 400 - ~ 2000 nm
Lateral size: ~ 250 nm
Thickness: 200 nm
Thickness: 5 nm
Support: phosphorus-doped Si