Loading ...

Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

gold/tantalum oxide/n-gallium nitride metal-insulator-semiconductor structure

Based on

1 Articles
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

aluminium

aluminum
Type Single Compound
Formula Al
Role layer
2

titanium

Type Single Compound
Formula Ti
Role layer
3

tantalum pentoxide

tantalum(V) oxide tantalum oxide
Type Single Compound
Formula O5Ta2
Role layer
4

gold

Type Single Compound
Formula Au
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
barrier height

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
electronics

More information available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
atomic force microscopy

More information available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
  1. f4L4N
  2. GhjX0OdmmUIzLYw7MbR
Product

gold/tantalum oxide/n-gallium nitride metal-insulator-semiconductor structure

Roughness: 0.874 nm

Thickness: 100 nm

Thickness: 25 nm

Thickness: 30 nm

Thickness: ~ 10 nm

Medium: none

Support: Si-doped n-type GaN on sapphire

Method 2

Type: Physical formation
Source:
  1. xLT0m
  2. SbAycvpfEqwtRljeXSC
Product

gold/tantalum oxide/n-gallium nitride metal-insulator-semiconductor structure

Roughness: 5.291 nm

Thickness: 100 nm

Thickness: 25 nm

Thickness: 30 nm

Thickness: ~ 10 nm

Medium: none

Support: Si-doped n-type GaN on sapphire

Method 3

Type: Physical formation
Source:
  1. MRO0a
  2. Pw9MzOXsr914SJZGXZ2
Product

gold/tantalum oxide/n-gallium nitride metal-insulator-semiconductor structure

Roughness: 6.869 nm

Thickness: 100 nm

Thickness: 25 nm

Thickness: 30 nm

Thickness: ~ 10 nm

Medium: none

Support: Si-doped n-type GaN on sapphire

Method 4

Type: Physical formation
Source:
  1. LOuvKM
Product

gold/tantalum oxide/n-gallium nitride metal-insulator-semiconductor structure

Roughness: 0.229 nm

Thickness: 100 nm

Thickness: 25 nm

Thickness: 30 nm

Thickness: ~ 10 nm

Medium: none

Support: Si-doped n-type GaN on sapphire

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial