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example of p-type doped semiconductor shallow layer

Based on

7 Articles
2 Patents
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

crystalline silicon

c-Si cSi
Type Single Compound
Formula Si
Role raw materials
2

atomic hydrogen

hydrogen atom
Type Single Compound
Formula H
Role dopant

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier lifetime

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
mass spectrometry

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon hydride
  1. bbs0vlVKow9XwfztweKAeqHC
  2. xdTWyuxMtHdNY7JmWGU7RKLqpIcajnp
Product

example of p-type doped semiconductor shallow layer

Thickness: 20 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • silicon hydride
  1. wGbgWEw0HwIoCcc9lDd3wR1s
  2. GCKujb6lw0LGBRGtqlBsFnN8DxccODa
Product

example of p-type doped semiconductor shallow layer

Thickness: 20 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • silicon hydride
  1. Z1aPnkjG587SfeskyEJrVRMX
  2. zDqMxYslMqxLU44LbX7c7ZlltSC4yrL
Product

example of p-type doped semiconductor shallow layer

Thickness: 20 nm

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • silicon
  • boron trifluoride
  1. ifFQbn
Product

example of p-type doped semiconductor shallow layer

Thickness: 55 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • silicon hydride
  1. 5B7hiGrf5XdxCnZfxrrlZxto
  2. 2HTVzneg98cvWb8hUsK0MpTEj4SkHET
Product

example of p-type doped semiconductor shallow layer

Thickness: 20 nm

Medium/Support: none

References

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