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etched Si(270 nm) NW grown on Si(200 nm)/[Si(8 ML)/Ge(2 ML)]/Si(10 nm) superlattice buffer of nine periods

Based on

1 Articles
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

silicon

Type Single Compound
Formula Si
Role layer
2

ultrathin Si/Ge multilayer

Si(8 ML)/Ge(2 ML) SL
Type Nano Material
Formula
Role layer
3

silicon

Type Single Compound
Formula Si
Role layer
4

silicon nanowires

Si nanowires Si NW
Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
  1. L3lFQ8AJO3ZmciaTx54sjIldH
Product

etched Si(270 nm) NW grown on Si(200 nm)/[Si(8 ML)/Ge(2 ML)]/Si(10 nm) superlattice buffer of nine periods

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon
  • germanium
  1. Of8n4S8IemN9aXrLrpLobecEDxYR6QflKju6bUPccKUr5x5D9PKzsitZkrlKXmK
Product

etched Si(270 nm) NW grown on Si(200 nm)/[Si(8 ML)/Ge(2 ML)]/Si(10 nm) superlattice buffer of nine periods

References

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