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etched Si(270 nm) NW grown on Si(200 nm)/[Si(8 ML)/Ge(2 ML)]/Si(10 nm) superlattice buffer of nine periods

Based on

1 Articles
2013 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

silicon

Type Single Compound
Formula Si
Role layer
2

ultrathin Si/Ge multilayer

Si(8 ML)/Ge(2 ML) SL
Type Nano Material
Formula
Role layer
3

silicon

Type Single Compound
Formula Si
Role layer
4

silicon nanowires

Si nanowires Si NW
Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
emission

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Applications

Area Application Nanomaterial Variant Source
lighting devices

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
  1. E8GEPRCnQfXcRxCiz6dVhwI5p
Product

etched Si(270 nm) NW grown on Si(200 nm)/[Si(8 ML)/Ge(2 ML)]/Si(10 nm) superlattice buffer of nine periods

Length: ~< 270 nm

Thickness: 200 nm

Thickness: ~< 10 nm

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon
  • germanium
  1. 8oC2vp5aeLLdzMPuStzl40radL3QNvcUpX24T3vOK59y2Phm5OSDVLVHnIJWKgL
Product

etched Si(270 nm) NW grown on Si(200 nm)/[Si(8 ML)/Ge(2 ML)]/Si(10 nm) superlattice buffer of nine periods

Length: 270 nm

Thickness: 10 nm

Thickness: 200 nm

Medium/Support: none

References

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