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AlN/GaN nanostructured material

Based on

1 Articles
2011 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role layer
2

aluminium nitride

aluminum nitride AlN
Type Single Compound
Formula AlN
Role layer
3

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type Single Compound
Formula GaN
Role layer
4

aluminium nitride

aluminum nitride AlN
Type Single Compound
Formula AlN
Role layer
5

gallium(III) arsenide

gallium(III) nitride gallium nitride n-type GaN i-GaN p-GaN u-GaN
Type Single Compound
Formula GaN
Role layer
6

aluminium gallium nitride

aluminum gallium nitride Al0.15Ga0.85N
Type Single Compound
Formula Al0.15Ga0.85N
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
magnetoresistance dependent on temperature

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Applications

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • aluminium nitride
  • aluminium gallium nitride
  • silicon
See all (4)
Product

AlN/GaN nanostructured material

Thickness: 24 nm

Thickness: 30 nm

Thickness: 350 nm

Thickness: 400 nm

Thickness: 5 nm

Medium/Support: none

References

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